参数资料
型号: MCD250-12IO1
厂商: IXYS
文件页数: 2/4页
文件大小: 0K
描述: MOD THYRISTOR/DIODE 1200V Y2-DCB
其它有关文件: SCR Module Selection Guide
标准包装: 2
结构: 串联 - SCR/二极管
SCR 数目,二极管: 1 SCR,1 个二极管
电压 - 断路: 1200V
电流 - 栅极触发电流 (Igt)(最大): 150mA
电流 - 导通状态 (It (AV))(最大): 287A
电流 - 导通状态 (It (RMS))(最大): 450A
电流 - 非重复电涌,50、60Hz (Itsm): 9000A,9600A
电流 - 维持(Ih): 150mA
安装类型: 底座安装
封装/外壳: Y2-DCB
包装: 散装
MCC 250
MCD 250
Symbol
Conditions
Characteristic Values
I RRM
I DRM
V T , V F
V T0
r T
T VJ = T VJM ; V R = V RRM ; V D = V DRM
I T /I F = 600 A; T VJ = 25°C
For power-loss calculations only (T VJ = 140°C)
70
40
1.36
0.85
0.82
mA
mA
V
V
m ?
V GT
I GT
V D = 6 V;
V D = 6 V;
T VJ
T VJ
T VJ
T VJ
=
=
=
=
25°C
-40°C
25°C
-40°C
2
3
150
200
V
V
mA
mA
V GD
I GD
T VJ = T VJM ;
V D = 2 / 3 V DRM
0.25
10
V
mA
I L
T VJ = 25°C; t P = 30 μs; V D = 6 V
200
mA
I G = 0.45 A; di G /dt = 0.45 A/μs
I H
t gd
T VJ = 25°C; V D = 6 V; R GK = ∞
T VJ = 25°C; V D = ? V DRM
150
2
mA
μs
t q
I G = 1 A; di G /dt = 1 A/μs
T VJ = T VJM ; I T = 300 A, t P = 200 μs; -di/dt = 10 A/μs
typ. 200
μs
Fig. 1 Gate trigger characteristics
V R = 100 V; dv/dt = 50 V/μs; V D = 2 / 3 V DRM
Q S
I RM
T VJ = 125°C; I T /I F = 400 A, -di/dt = 50 A/μs
760
275
μC
A
R thJC
per
thyristor/diode; DC current
0.129
K/W
per
module
other values
0.0645
K/W
R thJK
per
per
thyristor/diode; DC current
module
see Fig. 8/9
0.169
0.0845
K/W
K/W
d S
d A
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s 2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7)
Dimensions in mm (1 mm = 0.0394")
MCC
CSA class 5851, guide 460-1-1
MCD
Fig. 2 Gate trigger delay time
Threaded spacer for higher Anode/
Cathode construction:
Type ZY 250 , material brass
IXYS reserves the right to change limits, test conditions and dimensions
20
14
12
2-4
? 2004 IXYS All rights reserved
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