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参数资料
型号： MCF51AC128CCFUER
厂商： Freescale Semiconductor
文件页数： 11/42页
文件大小： 0K
描述： MCU 32BIT 128K FLASH 64-QFP
标准包装： 750
系列： MCF51AC
核心处理器： Coldfire V1
芯体尺寸： 32-位
速度： 50MHz
连通性： I²C，SCI，SPI
外围设备： LVD，PWM，WDT
输入/输出数： 54
程序存储器容量： 128KB（128K x 8）
程序存储器类型： 闪存
RAM 容量： 16K x 8
电压 - 电源 (Vcc/Vdd)： 2.7 V ~ 5.5 V
数据转换器： A/D 20x12b
振荡器型： 外部
工作温度： -40°C ~ 85°C
封装/外壳： 64-QFP
包装： 带卷 (TR)
Electrical Characteristics
MCF51AC256 ColdFire Microcontroller Data Sheet, Rev.7
Freescale Semiconductor
19
The average chip-junction temperature (TJ) in C can be obtained from:
TJ = TA + (PD JA)
Eqn. 1
where:
TA = Ambient temperature, C
JA = Package thermal resistance, junction-to-ambient, C/W
PD = Pint PI/O
Pint = IDD VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K (TJ + 273C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD (TA + 273C) + JA (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
2.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade
Integrated Circuits. (http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the
device specification requirements. Complete dc parametric and functional testing is performed per the
1 Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation
of other components on the board, and board thermal resistance
2 Junction to Ambient Natural Convection
3 1s — Single layer board, one signal layer
4 2s2p — Four layer board, 2 signal and 2 power layers
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相关代理商/技术参数
参数描述
MCF51AC128CCLKE 功能描述:32位微控制器 - MCU 128K FLASH, 16K RAM NO CAN RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT
MCF51AC128CCPUE 功能描述:32位微控制器 - MCU 128K FLASH, 16K RAM NO CAN RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT
MCF51AC128CVFGE 制造商:Freescale Semiconductor 功能描述:MCF51AC128CVFGE - Bulk
MCF51AC128CVFUE 功能描述:32位微控制器 - MCU 128KFLASH 16KRAM NO CAN RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT
MCF51AC128CVLKE 功能描述:32位微控制器 - MCU 128KFLASH 16KRAM NO CAN RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT
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