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| 型号： | MCF51JE128CMB |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PBGA81 |
| 封装： | 10 X 10 MM, ROHS COMPLIANT, MAPBGA-81 |
| 文件页数： | 39/50页 |
| 文件大小： | 1200K |
| 代理商： | MCF51JE128CMB |
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Preliminary Electrical Characteristics
Freescale Semiconductor
1-4
3.14
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51JE256RM).
Table 24. Flash Characteristics
#
Characteristic
Symbol
Min
Typical
Max
Unit
C
1
Supply voltage for program/erase
-40
°C to 105°CV
prog/erase
1.8
—
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
—
3.6
V
D
3
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
μsD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40°C to + 105°C
T = 25
°C
3
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
C
10
Data retention4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25
°C using the
Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618, Typical
Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
C
Preliminary — Subject to Change
相关PDF资料 |
PDF描述 |
|---|---|
| MCF51JM64VLH | 32-BIT, FLASH, 50.33 MHz, RISC MICROCONTROLLER, PQFP64 |
| MCF51JM128EVLH | 32-BIT, FLASH, 50.33 MHz, RISC MICROCONTROLLER, PQFP64 |
| MCF51JM32EVQH | 32-BIT, FLASH, 50.33 MHz, RISC MICROCONTROLLER, PQFP64 |
| MCF51JM64EVQH | 32-BIT, FLASH, 50.33 MHz, RISC MICROCONTROLLER, PQFP64 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCF51JE128VLK | 功能描述:32位微控制器 - MCU 128k Flash Non-analog IP RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| MCF51JE128VLL | 制造商:Freescale Semiconductor 功能描述:128K FLASH-NON-ANALOG IP - Bulk |
| MCF51JE128VMB | 功能描述:32位微控制器 - MCU 128k Flash Non-analog IP RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| MCF51JE256 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:An Energy-Efficient Solution from Freescale |
| MCF51JE256CLK | 功能描述:32位微控制器 - MCU FLASH-NON-ANALOG IP 256K RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
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