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参数资料
| 型号： | MCF51QE96CLH |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/38页 |
| 文件大小： | 0K |
| 描述： | IC MCU 32BIT 96K FLASH 64-LQFP |
| 产品培训模块： | Flexis QE Series Low Power Features |
| 标准包装： | 160 |
| 系列： | MCF51QE |
| 核心处理器： | Coldfire V1 |
| 芯体尺寸： | 32-位 |
| 速度： | 50MHz |
| 连通性： | I²C，SCI，SPI |
| 外围设备： | LVD，PWM，WDT |
| 输入/输出数： | 54 |
| 程序存储器容量： | 96KB（96K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 8K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.8 V ~ 3.6 V |
| 数据转换器： | A/D 20x12b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LQFP |
| 包装： | 托盘 |
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Electrical Characteristics
MCF51QE128 Series Data Sheet, Rev. 7
Freescale Semiconductor
11
The average chip-junction temperature (TJ) in °C can be obtained from:
TJ = TA + (PD × θJA)
Eqn. 1
where:
TA = Ambient temperature, °C
θ
JA = Package thermal resistance, junction-to-ambient, °C/W
PD = Pint + PI/O
Pint = IDD × VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification ESD stresses were performed for the human body model (HBM), the machine model (MM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
Latch-up
Minimum input voltage limit
– 2.5
V
Maximum input voltage limit
7.5
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCF51QE96CLK | 功能描述:32位微控制器 - MCU 32 BIT ; 96K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| MCF51QH128 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
| MCF51QH128VHS | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
| MCF51QH128VHX | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
| MCF51QH32VFM | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
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