参数资料
型号: MCF5213LCVM80
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PBGA81
封装: 10 X 10 MM, 1 MM PITCH, PLASTIC, ROHS COMPLIANT, BGA-81
文件页数: 22/56页
文件大小: 952K
代理商: MCF5213LCVM80
Electrical Characteristics
MCF5213 ColdFire Microcontroller, Rev. 3
Freescale Semiconductor
29
81 MAPBGA Junction to ambient, natural convection
Single layer board (1s)
θ
JA
611,2
°C/W
Junction to ambient, natural convection
Four layer board (2s2p)
θ
JA
352,3
°C/W
Junction to ambient, (@200 ft/min)
Single layer board (1s)
θ
JMA
502,3
°C/W
Junction to ambient, (@200 ft/min)
Four layer board (2s2p)
θ
JMA
312,3
°C/W
Junction to board
θ
JB
204
°C/W
Junction to case
θ
JC
125
°C/W
Junction to top of package
Natural convection
Ψ
jt
26
°C/W
Maximum operating junction temperature
Tj
105
oC
64 LQFP
Junction to ambient, natural convection
Single layer board (1s)
θ
JA
621,2
°C/W
Junction to ambient, natural convection
Four layer board (2s2p)
θ
JA
431,3
°C/W
Junction to ambient (@200 ft/min)
Single layer board (1s)
θ
JMA
501,3
°C/W
Junction to ambient (@200 ft/min)
Four layer board (2s2p)
θ
JMA
361,3
°C/W
Junction to board
θ
JB
264
°C/W
Junction to case
θ
JC
95
°C/W
Junction to top of package
Natural convection
Ψ
jt
26
°C/W
Maximum operating junction temperature
Tj
105
oC
64 QFN
Junction to ambient, natural convection
Single layer board (1s)
θ
JA
681,2
°C/W
Junction to ambient, natural convection
Four layer board (2s2p)
θ
JA
241,3
°C/W
Junction to ambient (@200 ft/min)
Single layer board (1s)
θ
JMA
551,3
°C/W
Junction to ambient (@200 ft/min)
Four layer board (2s2p)
θ
JMA
191,3
°C/W
Junction to board
θ
JB
84
°C/W
Junction to case (bottom)
θ
JC
0.65
°C/W
Junction to top of package
Natural convection
Ψ
jt
36
°C/W
Maximum operating junction temperature
Tj
105
oC
1
θ
JA and Ψjt parameters are simulated in conformance with EIA/JESD Standard 51-2 for natural convection. Freescale
recommends the use of
θ
JA and power dissipation specifications in the system design to prevent device junction
temperatures from exceeding the rated specification. System designers should be aware that device junction temperatures
can be significantly influenced by board layout and surrounding devices. Conformance to the device junction temperature
specification can be verified by physical measurement in the customer’s system using the
Ψ
jt parameter, the device power
dissipation, and the method described in EIA/JESD Standard 51-2.
2 Per JEDEC JESD51-2 with the single-layer board (JESD51-3) horizontal.
3 Per JEDEC JESD51-6 with the board JESD51-7) horizontal.
4 Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
5 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
6 Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
in conformance with Psi-JT.
Table 22. Thermal Characteristics (continued)
Characteristic
Symbol
Value
Unit
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