参数资料
型号: MCF52221CVM66
厂商: Freescale Semiconductor
文件页数: 26/55页
文件大小: 0K
描述: IC MCU 128K FLASH 66MHZ 81MAPBGA
标准包装: 240
系列: MCF5222x
核心处理器: Coldfire V2
芯体尺寸: 32-位
速度: 66MHz
连通性: I²C,SPI,UART/USART,USB OTG
外围设备: DMA,LVD,POR,PWM,WDT
输入/输出数: 56
程序存储器容量: 128KB(128K x 8)
程序存储器类型: 闪存
RAM 容量: 16K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
数据转换器: A/D 8x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 81-LBGA
包装: 托盘
Electrical Characteristics
MCF52223 ColdFire Microcontroller, Rev. 3
Freescale Semiconductor
32
2.5
EzPort Electrical Specifications
2.6
ESD Protection
Table 27. EzPort Electrical Specifications
Name
Characteristic
Min
Max
Unit
EP1
EPCK frequency of operation (all commands except READ)
fsys / 2
MHz
EP1a
EPCK frequency of operation (READ command)
fsys / 8
MHz
EP2
EPCS_b negation to next EPCS_b assertion
2 × Tcyc
—ns
EP3
EPCS_B input valid to EPCK high (setup)
5
ns
EP4
EPCK high to EPCS_B input invalid (hold)
5
ns
EP5
EPD input valid to EPCK high (setup)
2
ns
EP6
EPCK high to EPD input invalid (hold)
5
ns
EP7
EPCK low to EPQ output valid (out setup)
12
ns
EP8
EPCK low to EPQ output invalid (out hold)
0
ns
EP9
EPCS_B negation to EPQ tri-state
12
ns
Table 28. ESD Protection Characteristics1, 2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
2 A device is defined as a failure if after exposure to ESD pulses the device no longer
meets the device specification requirements. Complete DC parametric and functional
testing is performed per applicable device specification at room temperature followed by
hot temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD target for Human Body Model
HBM
2000
V
ESD target for Machine Model
MM
200
V
HBM circuit description
Rseries
1500
C
100
pF
MM circuit description
Rseries
0
C
200
pF
Number of pulses per pin (HBM)
Positive pulses
Negative pulses
1
Number of pulses per pin (MM)
Positive pulses
Negative pulses
3
Interval of pulses
1
sec
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