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参数资料
| 型号： | MCH3219 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, MCPH3, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 34K |
| 代理商： | MCH3219 |
MCH3219
No.8185-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
6
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=10mA
105
160
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=10mA
0.81
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100A, RBE=0
100
V
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0
6
V
Turn-ON Time
ton
See specified Test Circuit.
38
ns
Storage Time
tstg
See specified Test Circuit.
332
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
2194A
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
2
3
12
3
(Bottom view)
(Top view)
VR
RB
VCC=25V
VBE= --5V
+
50
INPUT
OUTPUT
RL
100
F
470
F
PW=20
s
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=500mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
0.6
0.4
0.2
1.0
0.8
0.5
0.3
0.1
0.9
0.7
0
1.0
0.6
0.8
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT08995
IT08996
IB=0
1mA
10mA
5mA
4mA
3mA
8mA
T
a=
-
-25
°C
25
°C
75
°C
6mA
2mA
15mA
50mA
30mA
20mA
40mA
VCE=2V
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