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参数资料
| 型号： | MCH3220 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, MCPH3, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 35K |
| 代理商： | MCH3220 |
MCH3220
No. A0180-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
23
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1.5A, IB=30mA
70
105
mV
VCE(sat)2
IC=3A, IB=60mA
120
180
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1.5A, IB=30mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0A
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
210
ns
Fall Time
tf
See specified Test Circuit.
11
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7019A-004
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
12
3
0 to 0.02
VR
VCC=5V
VBE= --5V
+
50
1k
INPUT
OUTPUT
RL
220
F
470
F
PW=20
s
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=1.5A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
3.0
1.5
1.0
0.5
2.5
2.0
0
3.0
1.5
1.0
0.5
2.5
2.0
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT10384
IT10385
IB=0mA
1mA
2mA
3mA
5mA
8mA
10mA
T
a=75
°C
25
°C
-
-25
°C
15mA
50mA
30mA
20mA
VCE=2V
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