参数资料
型号: MCH3409
元件分类: 小信号晶体管
英文描述: 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH3, 3 PIN
文件页数: 3/4页
文件大小: 26K
代理商: MCH3409
MCH3409
No.6911-3/4
0
1
2
3
12
4
VDS=10V
ID=2A
IT02728
0
20
40
0.2
60
0.4
80
100
120
0.8
0.9
0.6
1.2
1.0
140
160
IT02730
100ms
DC
operation
1ms
10ms
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01
23
5
7
23
5
7
2
3
5
0.1
1.0
10
IT02729
1.0
0.1
23
5
7
1.0
23
5
100
7
5
3
2
7
5
3
2
10
VDD=10V
VGS=4V
td(on)
td(off)
t r
tf
IT02726
0
10
5
100
10
1000
7
5
3
2
7
5
3
2
20
15
f=1MHz
Ciss
Coss
Crss
IT02727
Operation in this
area is limited by RDS(on).
IT02724
0.01
2
0.1
1.0
23
5
7
23
5
7
2
3
5
10
1.0
7
5
3
7
5
3
2
VDS=10V
75°
C
25°
C
Ta=
--25
°C
IT02725
0
0.2
0.4
0.6
0.8
1.0
1.4
1.2
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
VGS=0
--25
°C
25
°C
T
a=75
°C
ID=2A
IDP=8A
<10
s
100
s
yfs -- ID
Drain Current, ID -- A
F
orw
ard
T
ransfer
Admittance,
y
fs
-
S
Diode Forward Voltage, VSD -- V
F
orw
ard
Current,
I
F
--
A
IF -- VSD
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime,
SW
T
ime
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss,
Coss,
Crss
-
pF
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source
V
oltage,
V
GS
--
V
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Ta=25
°C
Single pulse
Mounted on a ceramic board(900mm2!0.8mm)
Ambient Temperature, Ta --
°C
PD -- Ta
Allo
w
able
Po
wer
Dissipation,
P
D
--
W
Mounted
on
a ceramic
board(900mm
2!
0.8mm)
相关PDF资料
PDF描述
MCH3410 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH3410 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH3411 3000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH3411 3000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH3412 3000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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