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参数资料
| 型号： | MCH3421 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH3, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 41K |
| 代理商： | MCH3421 |
MCH3421
No.7997-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7997
MCH3421
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
0.8
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
3.2
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=400mA
0.5
1.0
S
RDS(on)1
ID=400mA, VGS=10V
0.68
0.89
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=400mA, VGS=4V
0.85
1.2
Input Capacitance
Ciss
VDS=20V, f=1MHz
165
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
13
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
8.0
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7
ns
Rise Time
tr
See specified Test Circuit.
3
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
22
ns
Fall Time
tf
See specified Test Circuit.
10
ns
Marking : KW
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N2504 TS IM TB-00000253
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH3421-TL-E | 功能描述:MOSFET N-CH 100V 0.8A MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH3427-TL-E | 功能描述:MOSFET N-CH 20V 4A MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH3431 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3431-TL-E | 制造商:SANYO 功能描述:Nch 30V 3.5A lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 3.5A SC-82 |
| MCH3443 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N CHANNEL MOS SILICON TRANSISTOR |
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