参数资料
型号: MCH3427
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 4000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH3, 3 PIN
文件页数: 3/4页
文件大小: 35K
代理商: MCH3427
MCH3427
No.7746-3/4
<10
s
F
orw
ard
T
ransfer
Admittance,
yfs
-
S
yfs -- ID
F
orw
ard
Current,
I
F
-
A
IF -- VSD
VGS -- Qg
A S O
SW Time -- ID
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
Switching
T
ime,
SW
T
ime
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss,
Coss,
Crss
-
pF
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Ambient Temperature, Ta --
°C
PD -- Ta
Allo
w
able
Po
wer
Dissipation,
P
D
-
W
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
0.01
0.1
23
5
7
1.0
23
5
7
23
5
7 10
10
1000
7
5
3
100
7
5
3
2
7
5
3
2
IT07054
IT07052
0.1
1.0
23
5 7
23
5 7
10
23
5 7
0.001
0.01
23
5 7
10
1.0
0.01
0.1
7
5
3
2
7
5
3
2
7
5
3
2
IT07053
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
02
4
10
8
612
14
20
16
18
IT07055
100
1000
7
5
3
2
7
5
3
01
2
3
4
7
56
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IT07056
0
20
40
0.2
0.4
0.6
0.8
1.2
1.0
60
80
100
120
140
160
IT07058
2
3
5
7
2
3
2
3
5
7
1.0
0.1
2
3
5
7
0.01
10
1.0
10
0.1
0.01
23
5 7
23
5 7
23
5 7
2
3
IT07057
VDS=10V
75
°C
25
°C
VGS=0
--25
°C
25
°C
VDD=10V
VGS=4V
td(on)
td(off)
tr
tf
f=1MHz
Coss
Crss
Ciss
<10
s
IDP=16A
ID=4A
100
s
1ms
10ms
100ms
Operation in this
area is limited by RDS(on).
Ta=
--25
°C
T
a=75
°C
VDS=10V
ID=4A
DC
operation
(T
a=25
°C)
Ta=25
°C
Single pulse
Mounted on a ceramic board (900mm2!0.8mm)
Mounted
on
a
ceramic
board
(900mm
2!
0.8mm)
相关PDF资料
PDF描述
MCH3431 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH3431 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH3435 700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH3435 700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH3443 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
MCH3427-TL-E 功能描述:MOSFET N-CH 20V 4A MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
MCH3431 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH3431-TL-E 制造商:SANYO 功能描述:Nch 30V 3.5A lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 3.5A SC-82
MCH3443 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N CHANNEL MOS SILICON TRANSISTOR
MCH3443-TL-E 制造商:SANYO 功能描述:Nch 30V 1.5A lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 1.5A SC-82 制造商:Sanyo 功能描述:0