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参数资料
| 型号： | MCH3435 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH3, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 38K |
| 代理商： | MCH3435 |
MCH3435
No.8238-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8
ns
Rise Time
tr
See specified Test Circuit.
6
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
10
ns
Fall Time
tf
See specified Test Circuit.
8
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=700mA
1
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=700mA
0.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=700mA
0.2
nC
Diode Forward Voltage
VSD
IS=700mA, VGS=0
0.93
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm
2167A
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
2
3
12
3
(Bottom view)
(Top view)
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=350mA
RL=42
VDD=15V
VOUT
MCH3435
VIN
4V
0V
VIN
RDS(on) -- VGS
IT09221
RDS(on) -- Ta
IT09222
ID -- VDS
IT07510
ID -- VGS
IT07511
0.1
1.0
0
1.0
0
0.5
0
0.2
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.1
0.2
0.3
0.4
6.0V
4.0V
3.5V
3.0V
2.5V
2.0V
VGS=1.5V
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
T
a=
--25
°C
--25
°C
25
°C
25
°C
T
a=75
°C
75
°C
VDS=10V
2.0
3.0
4.0
5.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Ta=25
°C
ID=200mA
350mA
--40
--60
--20
0
20
40
60
80
100
120
140
0.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID=200mA,
VGS
=2.5V
ID=350mA,
VGS
=4.0V
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
--
A
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
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相关代理商/技术参数 |
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