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参数资料
| 型号： | MCH3459 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH3, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 36K |
| 代理商： | MCH3459 |
MCH3459
No.8110-3/4
IT07287
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.1
0.01
0.1
1.0
7
5
3
2
7
5
3
2
5
3
2
IF -- VSD
IT07285
yfs -- ID
0.1
0.01
2
3
57
23
1.0
23
5
1.0
5
7
2
3
5
2
3
0.1
T
a=75
°C
25
°C
--25
°C
VGS=0
VDS=10V
75
°C
25
°C
Ta=
--25
°C
Forward
T
ransfer
Admittance,
y
fs
-
S
Drain Current, ID -- A
Forward
Current,
I
F
--
A
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT07289
100
10
1.0
3
2
5
7
3
2
5
7
3
2
0.01
0.1
23
5
7
2
3
5
7
2
3
5
1.0
7
0
10
100
3
7
5
3
2
30
5
10152025
Ciss, Coss, Crss -- VDS
IT07291
f=1MHz
VDD=15V
VGS=10V
td(on)
td(off)
Ciss
Coss
Crss
tr
tf
VGS -- Qg
IT07293
0
0.5
0
1
2
3
5
4
6
7
8
9
3.5
10
1.0
1.5
2.0
2.5
3.0
VDS=10V
ID=1.8A
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Switching
T
ime,
SW
T
ime
-
ns
Ciss,
Coss,
Crss
-
pF
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
A S O
1.0
2
10
2
3
5
7
2
3
5
7
2
3
5
7
0.1
0.01
23
5
3
7
23
5 7
23
5 7
0.01
0.1
1.0
10
2
IT08250
100
s
1ms
10ms
100ms
Operation in this area
is limited by RDS(on).
ID=1.8A
DC
operation
(T
a=25
°C)
IDP=7.2A
<10
s
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Ta=25
°C
Single pulse
Mounted on a ceramic board (900mm2!0.8mm)
PD -- Ta
IT08251
0
20
40
60
80
100
120
0.8
1.0
140
160
0.6
0.4
0.2
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
-
W
Mounted
on
a ceramic
board
(900mm
2!
0.8mm)
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| MCH3474-TL-E | 功能描述:MOSFET N-CH 4A 30V MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:* 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH3474-TL-H | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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