型号: | MCH3460 |
厂商: | SANYO SEMICONDUCTOR CO LTD |
元件分类: | 小信号晶体管 |
英文描述: | 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
封装: | MCPH3, 3 PIN |
文件页数: | 1/4页 |
文件大小: | 35K |
代理商: | MCH3460 |
相关PDF资料 |
PDF描述 |
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MCH3460 | 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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MCH4013 | RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
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MCH3474 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
MCH3474_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
MCH3474-TL-E | 功能描述:MOSFET N-CH 4A 30V MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:* 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
MCH3474-TL-H | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
MCH3475 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |