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参数资料
| 型号： | MCH3474 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH3, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 289K |
| 代理商： | MCH3474 |
MCH3474
No. A1397-3/4
Gate-to-Source Voltage, VGS -- V
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ω
Ambient Temperature, Ta --
°C
RDS(on) -- Ta
RDS(on) -- VGS
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ω
IS -- VSD
Source
Current,
I
S
--
A
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
| yfs | -- I
D
Forward
T
ransfer
Admittance,
|
y
fs
|
-
S
SW Time -- ID
Switching
T
ime,
SW
T
ime
-
ns
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source
V
oltage,
V
GS
--
V
Ciss, Coss, Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Ciss,
Coss,
Crss
-
pF
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
0
0.4
0.2
0.6
1.2
1.0
0.8
0.01
0.1
7
5
3
2
1.0
7
5
3
2
7
3
--60 --40 --20
0
20
40
60
80
100 120 140 160
0
20
60
40
120
140
100
80
VGS
=1.8V
, ID
=0.5A
VGS
=4.5V
, ID
=2.0A
VGS
=2.5V
, ID
=1.0A
IT14346
Ta=25
°C
IT14347
IT14348
IT14349
Ta=
--25
°C
75
°C
25
°C
VDS=10V
25
°C
--25
°C
Ta
=
7
5°
C
VGS=0V
10
7
5
2
5
3
2
3
2
3
100
7
5
0.01
IT14350
VDD=15V
VGS=4.5V
td(off)
tr
tf
10
2
0.1
35 7
2
3
5 7
1.0
35 7
2
td(on)
ID=1A
0.5A
01
56
4
3
28
10
79
0
20
40
120
80
60
100
140
2
1.0
7
0.1
5
3
7
3
0.1
2
0.01
57
23
3
1.0
2
57
35
2A
030
10
15
20
25
5
IT14351
7
100
5
3
2
7
5
3
2
1000
10
Crss
Coss
Ciss
f=1MHz
06
5
4
3
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.5
4.0
IT14352
VDS=15V
ID=4A
Operation in this area
is limited by RDS(on).
DC
operation(
Ta=25
°C
)
100
μs
1ms
10ms
100ms
IT14353
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
3
10
0.01
0.1
0.01
57
23
2
5 7
23
3
2
57
3
1.0
10
5
ID=4A
IDP=16A
PW
≤10μs
Ta=25
°C
Single pulse
When mounted on ceramic substrate
(900mm2
×0.8mm)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH3474_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3474-TL-E | 功能描述:MOSFET N-CH 4A 30V MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:* 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH3474-TL-H | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3475 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH3475_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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