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参数资料
| 型号： | MCH3475 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH3, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 53K |
| 代理商： | MCH3475 |
MCH3475
No. A1000-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
3.4
ns
Rise Time
tr
See specified Test Circuit.
3.6
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
10.5
ns
Fall Time
tf
See specified Test Circuit.
4.0
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=1.8A
2.0
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=1.8A
0.33
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=1.8A
0.29
nC
Diode Forward Voltage
VSD
IS=1.8A, VGS=0V
0.86
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7019A-003
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
12
3
0 to 0.02
PW=10s
D.C.≤1%
P.G
50
G
S
D
ID=0.9A
RL=16.7
VDD=15V
VOUT
MCH3475
VIN
10V
0V
VIN
ID -- VDS
ID -- VGS
Drain
Current,
I
D
--
A
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
0
0.2
1.2
0.8
1.6
0.6
0.4
1.4
1.0
1.8
0
0.2
1.2
0.8
1.6
0.6
0.4
1.4
1.0
2.0
1.8
1.0
0.8
0.6
0.1
0.2
0.4
0.9
0.7
0.3
0.5
IT13107
01.0
0.5
3.0
2.0
3.5
2.5
1.5
4.0
IT13108
Ta
=
75
°C
--
2
5°
C
VDS=10V
15.0V
4.0V
8.0V
6.0V
10.0V
25
°C
VGS=2.5V
3.0V
3.5V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH3475_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3475-TL-E | 功能描述:MOSFET N-CH 30V 1.8A MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH3476 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3476-TL-H | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3477 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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