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参数资料
| 型号： | MCH3914 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | MCPH3, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 211K |
| 代理商： | MCH3914 |
MCH3914
No. A1511-1/4
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
| yfs | is large.
Ciss is small.
Small package.
FBET process.
Halogen free compliance.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
15
V
Gate-to-Drain Voltage
VGDS
--15
V
Gate Current
IG
5mA
Drain Current
ID
50
mA
Allowable Power Dissipation
PD
When mounted on ceramic substrate (600mm2×0.8mm)
300
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10μA, VDS=0V
--15
V
Gate-to-Source Leakage Current
IGSS
VGS=--10V, VDS=0V
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=5V, ID=10μA
--0.6
--1.4
--3.0
V
Continued on next page.
Ordering number : ENA1511
72209AC TK IM TC-00002014
SANYO Semiconductors
DATA SHEET
MCH3914
N-Channel Junction Silicon FET
High-Frequency Amplier,
Analog Switch Applications
www.semiconductor-sanyo.com/network
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