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参数资料
| 型号： | MCH4016 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | HALOGEN FREE, MCPH4, SC-82AB, SC-82, 4 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 355K |
| 代理商： | MCH4016 |
MCH4016
No. A1922-2/10
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=5V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
1.0
μA
DC Current Gain
hFE
VCE=5V, IC=5mA
60
150
Gain-Bandwidth Product
fT
VCE=5V, IC=10mA
8
10
GHz
Forward Transfer Gain
| S21e |
2
VCE=5V, IC=10mA, f=1GHz
15
18
dB
Noise Figure
NF
VCE=5V, IC=10mA, f=1GHz
1.2
1.8
dB
Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output
Capacitance,
Cob
-
pF
Collector Current, IC -- mA
hFE -- IC
DC
Current
Gain,
h
FE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
mA
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
Collector
Current,
I
C
-
mA
IC -- VCE
Collector Current, IC -- mA
fT -- IC
Gain-Bandwidth
Product,
f
T
-
GHz
Collector-to-Base Voltage, VCB -- V
Cre -- VCB
Reverse
T
ransfer
Capacitance,
Cre
-
pF
IT16301
0
0.2
0.4
0.6
0.8
1.0
IT16302
IT16303
012
10
8
46
2
0
10
30
20
5
15
25
0
10
25
20
15
5
30
IB=0μA
50
μA
2
3
5
7
2
3
5
7
100
10
1000
3
25 7
0.1
3
25 7
1.0
10
3
25 7 100
VCE=5V
2
7
5
3
0.1
1.0
3
25
100
0.1
73
25 7
1.0
3
25 7 10
f=1MHz
IT16304
IT16306
7
2
3
5
7
2
3
5
100
10
1.0
23
5
7
10
23
5
7
100
VCE=5V
f=1GHz
5
7
2
3
5
7
2
3
1.0
0.01
0.1
3
25
100
0.1
73
25 7
10
3
25 7
1.0
f=1MHz
IT16305
100
μA
150
μA
200μA
500
μ
A
250μA
300μA
350μA
400μA
450
μA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH4016-TL-H | 功能描述:射频双极电源晶体管 HIGH-FREQUENCY TR RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MCH4017 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier |
| MCH4017-TL-H | 功能描述:两极晶体管 - BJT HIGH-FREQUENCY TR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MCH4020 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:RF Transistor 8V, 150mA, fT=16GHz, NPN Single MCPH4 |
| MCH4020_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier |
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