MCH4021
No. A1281-1/9
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low-noise use : NF=1.2dB typ (f=1GHz).
High cut-off frequency : fT=16GHz typ (VCE=5V).
High gain : |S21e|
2=17.5dB typ (f=1GHz).
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
15
V
Collector-to-Emitter Voltage
VCEO
8V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
150
mA
Collector Dissipation
PC
400
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=5V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
1.0
μA
DC Current Gain
hFE
VCE=5V, IC=50mA
60
150
Gain-Bandwidth Product
fT
VCE=5V, IC=50mA
13
16
GHz
Forward Transfer Gain
|S21e|
2
VCE=5V, IC=50mA, f=1GHz
17.5
dB
Noise Figure
NF
VCE=1V, IC=10mA, f=1GHz
1.2
1.8
dB
Marking : GL
Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering number : ENA1281
80608AB TI IM TC-00001500
SANYO Semiconductors
DATA SHEET
MCH4021 NPNEpitaxialPlanarSiliconTransistor
High Frequency Low-Noise Amplier
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