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参数资料
| 型号： | MCH5812 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH5, 5 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 51K |
| 代理商： | MCH5812 |
MCH5812
No.7998-1/6
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7998
MCH5812
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M)
contained in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
2A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
8
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
15
V
Average Output Current
IO
1A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
3
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : QN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2004PE TS IM TB-00001089
相关PDF资料 |
PDF描述 |
|---|---|
| MCH5812 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5818 | 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5818 | 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5819 | 1400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5823 | 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH5812-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
| MCH5815 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| MCH5815-TL-E | 制造商:SANYO 功能描述:Pch+SBD 12V 1.5A MCPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH SCHOT DIODE SC-82 制造商:Sanyo 功能描述:0 |
| MCH5818 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
| MCH5819 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:MCH5819 |
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