型号: | MCH5836 |
厂商: | SANYO SEMICONDUCTOR CO LTD |
元件分类: | 小信号晶体管 |
英文描述: | 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
封装: | MCPH5, 5 PIN |
文件页数: | 1/6页 |
文件大小: | 66K |
代理商: | MCH5836 |
相关PDF资料 |
PDF描述 |
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MCH6337 | 4.5 A, 20 V, 0.049 ohm, P-CHANNEL, Si, POWER, MOSFET |
MCH6436 | 6000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
MCH6544 | 500 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
MCH6653 | 100 mA, 60 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
MCH908JW32FC | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, QCC48 |
相关代理商/技术参数 |
参数描述 |
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MCH5837 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
MCH5837-TL-E | 功能描述:MOSFET N-CH/DIODE SCHOTTKY MCPH5 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
MCH5839-TL-H | 制造商:ON Semiconductor 功能描述:PCH+SBD 1.8V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH+SBD 1.8V DRIVE SERIES |
MCH5908 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications |
MCH5908_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency Amplifi er, AM Amplifier, Low-Frequency Amplifier Applications |