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参数资料
| 型号： | MCH6320 |
| 元件分类： | JFETs |
| 英文描述： | 3.5 A, 12 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 51K |
| 代理商： | MCH6320 |
MCH6320
No. A0815-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0815
MCH6320
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Features
Ultrahigh-speed switching.
1.8V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--12
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
--3.5
A
Drain Current (Pulse)
IDP
PW≤10s, duty cycle≤1%
--14
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (1200mm2
0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--12
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--12V, VGS=0V
--10
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--6V, ID=--1mA
--0.4
--1.4
V
Forward Transfer Admittance
yfs
VDS=--6V, ID=--1.5A
2.7
4.5
S
RDS(on)1
ID=--1.5A, VGS=--4.5V
54
70
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--0.8A, VGS=--2.5V
80
115
m
RDS(on)3
ID=--0.3A, VGS=--1.8V
125
215
m
Marking : JU
Continued on next page.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
91907PE TI IM TC-00000907
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6320-TL-E | 功能描述:MOSFET PCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6321 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6321_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6321-TL-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6321-TL-W | 制造商:ON Semiconductor 功能描述:PCH 4A 20V 1.8V DRIVE MCP - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL - PCH 4A 20V 1.8V DRIVE MCP |
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