- 您现在的位置：买卖IC网 > PDF目录95924 > MCH6413 (SANYO SEMICONDUCTOR CO LTD) 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MCH6413 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 27K |
| 代理商： | MCH6413 |
MCH6413
No.7553-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
2A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
8
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
1
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.4
2.4
S
RDS(on)1
ID=1A, VGS=4V
145
190
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=2.5V
185
260
m
RDS(on)3
ID=0.1A, VGS=1.8V
245
370
m
Marking : KM
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7553
MCH6413
Package Dimensions
unit : mm
2193A
[MCH6413]
N1003 TS IM TA-4127
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
相关PDF资料 |
PDF描述 |
|---|---|
| MCH6413 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6415 | 4000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6421 | 5.5 A, 20 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MCH6421 | 5.5 A, 20 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MCH6422 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6415-TL-E | 制造商:SANYO 功能描述:Nch 20V 4A lbogU Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 4A SC-82 制造商:Sanyo 功能描述:0 |
| MCH6421 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6421_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6421-TL-E | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6422 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
发布紧急采购，3分钟左右您将得到回复。