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参数资料
| 型号： | MCH6413 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 27K |
| 代理商： | MCH6413 |
MCH6413
No.7553-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
120
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
31
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
29
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
18
ns
Fall Time
tf
See specified Test Circuit
22
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=2A
2.3
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=2A
0.50
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=2A
0.73
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0
0.97
1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=1A
RL=10
VDD=10V
VOUT
MCH6413
VIN
4V
0V
VIN
1.0
0.8
0.6
0.4
0.2
--60
--40
--20
0
20
40
60
80
100
120
140
160
02468
10
RDS(on) -- VGS
IT06291
0
0.2
0
400
350
300
250
200
150
100
50
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
ID -- VDS
IT06289
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID -- VGS
VDS=10V
IT06290
RDS(on) -- Ta
IT06292
400
0
Ta=25
°C
1.0A
0.5A
ID=0.1A
VGS=1.0V
1.5V
1.8V
2.5V
4.0V
10V
--25
°C
25
°C
T
a=75
°C
350
300
250
200
150
100
50
ID=0.1A,
VGS
=1.8V
ID=0.5A,
VGS
=2.5V
ID=1.0A,
VGS
=4.0V
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
--
A
Ambient Temperature, Ta --
°C
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相关代理商/技术参数 |
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|---|---|
| MCH6415-TL-E | 制造商:SANYO 功能描述:Nch 20V 4A lbogU Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 4A SC-82 制造商:Sanyo 功能描述:0 |
| MCH6421 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6421_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6421-TL-E | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6422 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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