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参数资料
| 型号： | MCH6535 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 15 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 46K |
| 代理商： | MCH6535 |
MCH6535
No.7644-1/5
Applications
MOSFET gate drivers, low-frequency power amplifier, high-speed switching, motor drivers, muting.
Features
Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
Ultrasmall package permitting applied sets to be small and slim.
Small ON-resistance (Ron).
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--15)20
V
Collector-to-Emitter Voltage
VCEO
(--12)15
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
Mounted on a ceramic board (600mm2!0.8m)
0.5
W
Total Power Dissipation
PT
Mounted on a ceramic board (600mm2!0.8m)
0.55
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)12V, IE=0
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)100
nA
DC Current Gain
hFE
VCE=(--)2V, IC=(--10)50mA
300
(700)800
Gain-Bandwidth Product
fT
VCE=(--)2V, IC=(--)50mA
(450)440
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(6)4
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)400mA, IB=(--)20mA
(--120)140
(--240)280
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)400mA, IB=(--)20mA
(--0.9)0.8
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10A, IE=0
(--15)20
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--12)15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10A, IC=0
(--)5
V
Marking : EH
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7644
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
42004EA TS IM TA-100669
MCH6535
PNP / NPN Epitaxial Planar Silicon Transistor
Push-Pull Circuit Applications
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| MCH6541-TL-E | 功能描述:两极晶体管 - BJT 2.5/3.3V 4:1 DIFF MUX RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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