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参数资料
| 型号： | MCH6644 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 代理商： | MCH6644 |
MCH6644
No.8959-2/6
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6.2
ns
Rise Time
tr
See specified Test Circuit.
4.5
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
13
ns
Fall Time
tf
See specified Test Circuit.
6.4
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=1.8A
3.2
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=1.8A
0.74
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=1.8A
0.42
nC
Diode Forward Voltage
VSD
IS=1.8A, VGS=0V
0.93
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--0.6A
0.6
1.0
S
RDS(on)1
ID=--0.6A, VGS=--10V
320
420
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--0.3A, VGS=--4V
590
830
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
104
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
22
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
17
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12.5
ns
Rise Time
tr
See specified Test Circuit.
24
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
12
ns
Fall Time
tf
See specified Test Circuit.
12.2
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--1.2A
3.3
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--1.2A
0.48
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--1.2A
0.45
nC
Diode Forward Voltage
VSD
IS=--1.2A, VGS=0V
--0.91
--1.5
V
Package Dimensions
Electrical Connection
unit : mm
7022-006
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
Top View
Bottom View
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
65
4
12
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6644-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6646 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6646-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 2A MCPH6 |
| MCH6649 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6649-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 30V 0.2A SC-82 |
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