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参数资料
| 型号： | MCH6646 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 32K |
| 代理商： | MCH6646 |
MCH6646
No. A0112-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
2.0
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
8.0
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.4
2.4
S
RDS(on)1
ID=1.0A, VGS=4V
120
160
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=2.5V
160
225
m
RDS(on)3
ID=0.1A, VGS=1.8V
220
330
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
115
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
35
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Marking : WW
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0112
D2805PE MS IM TB-00002022
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
MCH6646
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6646-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 2A MCPH6 |
| MCH6649 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6649-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 30V 0.2A SC-82 |
| MCH6650 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6650-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 30V 0.35A SC-82 |
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