参数资料
型号: MCL101A-TR3
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.03 A, SILICON, SIGNAL DIODE
封装: HALOGEN FREE AND ROHS COMPLIANT, GLASS, MICROMELF-2
文件页数: 2/5页
文件大小: 158K
代理商: MCL101A-TR3
www.vishay.com
2
Document Number 85627
Rev. 1.4, 05-Aug-10
MCL101A, MCL101B, MCL101C
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Part
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
IR = 10 A
MCL101A
V(BR)
60
V
MCL101B
V(BR)
50
V
MCL101C
V(BR)
40
V
Leakage current
VR = 50 V
MCL101A
IR
200
nA
VR = 40 V
MCL101B
IR
200
nA
VR = 30 V
MCL101C
IR
200
nA
Forward voltage drop
IF = 1 mA
MCL101A
VF
410
mV
MCL101B
VF
400
mV
MCL101C
VF
390
mV
IF = 15 mA
MCL101A
VF
1000
mV
MCL101B
VF
950
mV
MCL101C
VF
900
mV
Diode capacitance
VR = 0 V, f = 1 MHz
MCL101A
CD
2pF
MCL101B
CD
2.1
pF
MCL101C
CD
2.2
pF
Figure 1. Reverse Current vs. Reverse Voltage
I R
=
Re
v
erse
C
u
rrent
(
A)
0.01
0.1
1
10
100
0
1015
2025
3035
4045
50
V
R - Reverse Voltage (V)
16204
T
j = 125 °C
T
j = 100 °C
T
j = 75 °C
T
j = 50 °C
T
j = 25 °C
5
Figure 2. Diode Capacitance vs. Reverse Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1015
2025
3035
4045
50
V
R - Reverse Voltage (V)
16205
C
D
-
Diode
Capacitance
(pF)
T
j = 25 °C
5
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