参数资料
型号: MCL103C-GS08
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, GLASS, MICROMELF-2
文件页数: 2/5页
文件大小: 318K
代理商: MCL103C-GS08
www.vishay.com
2
Document Number 85632
Rev. 1.4, 27-Jan-06
MCL103A / 103B / 103C
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Reverse Breakdown Voltage
IR = 10 A
MCL103A
V(BR)R
40
V
MCL103B
V(BR)R
30
V
MCL103C
V(BR)R
20
V
Leakage current
VR = 30 V
MCL103A
IR
5A
VR = 20 V
MCL103B
IR
5A
VR = 10 V
MCL103C
IR
5A
Forward voltage drop
IF = 20 mA
VF
0.37
V
IF = 200 mA
VF
0.6
V
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
pF
Reverse recovery time
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
10
ns
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Forward Current vs. Forward Voltage
I
For
w
ard
C
u
rrent
(mA)
0 100 200 300 400 500 600 700 800 900 1000
VF – Forward Voltage (mV)
16765
F
1000
100
10
1
0.1
0.01
0.001
I–
F
o
rw
ard
C
u
rrent
(A)
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
VF – Forward Voltage (V)
16766
F
Figure 3. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
1
10
100
1000
10000
0
204060
80
100 120 140 160
Tj –Junction Temperature (°C)
16767
I–
R
e
v
erse
C
u
rrent
(A)
R
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VR –Reverse Voltage (V)
16768
C
Diode
Capacitance
(pF)
D
f = 1 MHz
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