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参数资料
| 型号： | MCL4154-TR |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.15 A, 35 V, SILICON, SIGNAL DIODE |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, GLASS, MICROMELF-2 |
| 文件页数： | 2/5页 |
| 文件大小： | 161K |
| 代理商： | MCL4154-TR |
www.vishay.com
2
Document Number 85568
Rev. 1.9, 20-Aug-10
MCL4154
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
Mounted on epoxy-glass hard
tissue, Fig. 4,
35 m copper clad, 0.9 mm2
copper area per electrode
RthJA
500
K/W
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 30 mA
VF
1000
mV
Reverse current
VR = 25 V
IR
100
nA
VR = 25 V, Tj = 150 °C
IR
100
A
Breakdown voltage
IR = 5 A, tp/T = 0.01, tp = 0.3 ms
V(BR)
35
V
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
4pF
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA
trr
4ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
2ns
Figure 1. Reverse Current vs. Junction Temperature
040
80
120
160
0.01
0.1
1
10
100
I-
R
e
v
erse
C
u
rrent
(
A)
R
Tj - Junction Temperature (°C)
200
94 9154
V
R = 25 V
Scattering Limit
Figure 2. Forward Current vs. Forward Voltage
00.4
0.8
1.2
1.6
0.1
1
10
100
1000
I-
F
o
rw
ard
C
u
rrent
(mA)
F
V - Forward Voltage (V)
2.0
94 9152
F
T = 25 °C
j
T = 100 °C
j
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