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参数资料
| 型号： | MCL4448-T |
| 厂商： | RECTRON LTD |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.5 A, SILICON, SIGNAL DIODE |
| 封装： | MICROMELF-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 37K |
| 代理商： | MCL4448-T |
MCL4448
TECHNICAL SPECIFICATION
1N4448 Micro-MELF SIGNAL DIODE
RECTRON
SEMICONDUCTOR
ITEMS
Symbol
Ratings
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Recovery
Time
trr
4
ns
Power Dissipation
P
500
mW
Forward Current
IFM
500 *
mA
Junction Temp.
Tj
(-65 to 175)
°C
Storage Temp.
Tstg
(-65 to 175)
°C
Items
Materials
Package
Micro MELF
Case
Hermetically sealed glass
Lead/Finish
Double stud/Solder Plating
Chip
Glass Passivated
Mechanical Data
Ratings
Symbol
Ratings
Unit
Non-Repetive Peak Reverse Voltage
VRM
100
V
Minimum Breakdown Voltage @IR= 100mA
BV
75
V
Peak Forward Surge Current @ t = 1.0s
IFSM
1 *
A
Forward Continuous Current
IFM
500 *
mA
Maximum Forward Voltage IF= 100mA
VF
1V
Maximum Reverse Current
VR= 20V
25
nA
VR= 75V
5
A
VR= 20V, Tj= 150 °C
30
A
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IR= -1mA, RL= 100
Maximum Thermal Resistance
RθJA
300
K / W
trr
4
ns
IR
Cj
4
pF
Absolute Maximum Ratings (Ta = 25°C)
Micro-MELF
* Note: Device terminals at ambient temperature
0.079(2.0)
0.071(1.8)
0.008(0.2)
0.049(1.25)
0.047(1.20)
Units in mm
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