参数资料
型号: MCM64PC64TSG66
厂商: MOTOROLA INC
元件分类: DRAM
英文描述: 256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium
中文描述: 64K X 64 CACHE TAG SRAM MODULE, 8 ns, DMA160
封装: CARD EDGE MODULE-160
文件页数: 13/16页
文件大小: 167K
代理商: MCM64PC64TSG66
MCM64PC32T
MCM64PC64T
13
MOTOROLA FAST SRAM
TAG RAM WRITE CYCLE
(See Notes 1 and 2)
– 15
Parameter
Symbol
Min
Max
Unit
Notes
Write Cycle Time
tAVAV
tAVWL
tAVWH
tDVWH
tWHDX
tWLQZ
tWHQX
tWHAX
15
ns
3
Address Setup Time
0
ns
Address Valid to End of Write
12
ns
Data Valid to End of Write
7
ns
Data Hold Time
0
ns
Write Low to Output High–Z
0
7
ns
5,6,7
Write High to Output Active
4
ns
5,6,7
Write Recovery Time
0
ns
NOTES:
1. A write occurs when CWE is low.
2. If CG goes low coincident with or after CWE goes low, the output will remain in a high impedance state.
3. All timings are referenced from the last valid address to the first address transition.
4. If CG
VIH, the output will remain in a high impedance state.
5. At any given voltage and temperature, tWLQZ (max) is less than tWHQX (min), both for a given device and from device to device.
6. Transition is measured
±
500 mV from steady–state voltage with load of Figure 3b.
7. This parameter is sampled and not 100% tested.
TAG RAM WRITE CYCLE
(See Notes 1 and 2)
DATA VALID
tDVWH
tAVWL
tAVWH
tAVAV
tWHAX
tWLWH
tWHDX
tWLQZ
tWHQX
HIGH Z
HIGH Z
AX (ADDRESS)
TWE
Q (DATA OUT)
D (DATA IN)
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