- 您现在的位置：买卖IC网 > PDF目录224253 > MCM69F536CTQ12R (MOTOROLA INC) 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM PDF资料下载
参数资料
| 型号： | MCM69F536CTQ12R |
| 厂商： | MOTOROLA INC |
| 元件分类： | SRAM |
| 英文描述： | 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 32K X 36 CACHE SRAM, 12 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 10/12页 |
| 文件大小： | 211K |
| 代理商： | MCM69F536CTQ12R |
MCM69F536C
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
3.135
3.3
3.6
V
Input Low Voltage
VIL
– 0.5*
—
0.8
V
Input High Voltage
VIH
2.0
—
5.5**
V
*VIL ≥ – 2 V for t ≤ tKHKH/2.
** VIH ≤ 6 V for tKHKH/2.
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Notes
Input Leakage Current (0 V
≤ Vin ≤ VDD) (Excluding LBO)
Ilkg(I)
—
± 1
A
Output Leakage Current (0 V
≤ Vin ≤ VDD)
Ilkg(O)
—
± 1
A
AC Supply Current (Device Selected,
MCM69F536C–7.5
All Outputs Open,
MCM69F536C–8
All Inputs Toggling at Vin ≤ VIL or ≥ VIH,
MCM69F536C–8.5
Cycle Time
≥ tKHKH min)
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
IDDA
—
320
310
300
mA
1, 2, 3
CMOS Standby Supply Current (Deselected,
MCM69F536C–7.5
Clock (K) Cycle Time
≥ tKHKH,
MCM69F536C–8
All Inputs Toggling at CMOS Levels
MCM69F536C–8.5
Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
ISB1
—
150
140
130
mA
4
Clock Running Supply Current (Deselected,
MCM69F536C–7.5
Clock (K) Cycle Time
≥ tKHKH,,
MCM69F536C–8
All Other Inputs Held to Static CMOS Levels
MCM69F536C–8.5
Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
ISB2
—
55
50
45
mA
4
Output Low Voltage (IOL = 8 mA)
VOL
—
0.4
V
Output High Voltage (IOH = – 4 mA)
VOH
2.4
—
V
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. All addresses transition simultaneously low (LSB) and then high (HSB).
3. Data states are all zero.
4. Device in deselected mode as defined by the Truth Table.
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
—
4
6
pF
Input/Output Capacitance
CI/O
—
7
9
pF
相关PDF资料 |
PDF描述 |
|---|---|
| MCM69F536CTQ9 | 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F817ZP6 | 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F817ZP6R | 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F817ZP7 | Low Input Voltage 3A Synchronous Buck Converter with 1.5V Output 20-HTSSOP -40 to 125 |
| MCM69F817 | 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCM69F536CTQ8.5 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F536CTQ8.5R | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F536CTQ9 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F536CTQ9R | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F618C | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
发布紧急采购，3分钟左右您将得到回复。