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参数资料
| 型号： | MCM69F819 |
| 厂商： | Motorola, Inc. |
| 英文描述： | 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 256 × 18位流通过BurstRAM同步快速静态存储器 |
| 文件页数： | 12/16页 |
| 文件大小： | 175K |
| 代理商： | MCM69F819 |
MCM69F817
5
MOTOROLA FAST SRAM
TRUTH TABLE (See Notes 1 Through 5)
Next Cycle
Address
Used
SE1
SE2
SE3
ADSP
ADSC
ADV
G 3
DQx
Write 2, 4
Deselect
None
1
X
0
X
High–Z
X
Deselect
None
0
X
1
0
X
High–Z
X
Deselect
None
0
X
0
X
High–Z
X
Deselect
None
X
1
0
X
High–Z
X
Deselect
None
X
0
X
1
0
X
High–Z
X
Begin Read
External
0
1
0
X
High–Z
X5
Begin Read
External
0
1
0
1
0
X
High–Z
READ5
Continue Read
Next
X
1
0
1
High–Z
READ
Continue Read
Next
X
1
0
DQ
READ
Continue Read
Next
1
X
1
0
1
High–Z
READ
Continue Read
Next
1
X
1
0
DQ
READ
Suspend Read
Current
X
1
High–Z
READ
Suspend Read
Current
X
1
0
DQ
READ
Suspend Read
Current
1
X
1
High–Z
READ
Suspend Read
Current
1
X
1
0
DQ
READ
Begin Write
External
0
1
0
1
0
X
High–Z
WRITE
Continue Write
Next
X
1
0
X
High–Z
WRITE
Continue Write
Next
1
X
1
0
X
High–Z
WRITE
Suspend Write
Current
X
1
X
High–Z
WRITE
Suspend Write
Current
1
X
1
X
High–Z
WRITE
NOTES:
1. X = don’t care. 1 = logic high. 0 = logic low.
2. Write is defined as either (a) any SBx and SW low or (b) SGW is low.
3. G is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (tGLQX) following G going low.
4. On write cycles that follow read cycles, G must be negated prior to the start of the write cycle to ensure proper write data setup times. G must
also remain negated at the completion of the write cycle to ensure proper write data hold times.
5. This read assumes the RAM was previously deselected.
LINEAR BURST ADDRESS TABLE (LBO = VSS)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
INTERLEAVED BURST ADDRESS TABLE (LBO = VDD)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
WRITE TRUTH TABLE
Cycle Type
SGW
SW
SBa
SBb
Read
H
X
Read
H
L
H
Write Byte a
H
L
H
Write Byte b
H
L
H
L
Write All Bytes
H
L
Write All Bytes
L
X
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCM69F819TQ11 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F819TQ11R | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F819TQ7.5 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F819TQ7.5R | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F819TQ8 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
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