参数资料
型号: MCP120T-315I/SN
厂商: Microchip Technology
文件页数: 5/16页
文件大小: 0K
描述: IC SUPRVSR 3.15V OPN DRAIN 8SOIC
标准包装: 3,300
类型: 简单复位/加电复位
监视电压数目: 1
输出: 开路漏极或开路集电极
复位: 低有效
复位超时: 最小为 150 ms
电压 - 阀值: 3.075V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
MCP120/130
2.3
Effect of Temperature on Timeout
Period (t RPU )
The timeout period (t RPU ) determines how long the
device remains in the reset condition. This is controlled
by an internal RC timer and is effected by both V DD
and temperature. The graph shown in Figure 2-3
shows typical response for different V DD values and
temperatures.
700
1.002
1.000
0.998
0.996
0.994
0.992
600
V DD = 6V
0.997
-40
-20
0
20
40
60
80
100
500
400
V DD = 5V
TEMPERATURE ( ° C)
* Multiply value at 25 ° C by this
factor to determine the value at
temperature
300
200
V DD = 4V
V DD = 3V
Figure 2-5:
Normalized V TRIP vs. Temperature
100
-40
-20
0
20
40
60
80
100
800
V DD = 2.5V
Figure 2-3:
TEMPERATURE ( ° C)
t RPU vs. Temperature
700
600
500
V DD = 1.5V
V DD = 3.5V
400
60
300
V DD = 4.5V
50
V DD = 5.5V
V DD = 5V
200
100
40
0
T A = +25°C
0
2
4
6
8
10 12 14 16 18 20
30
20
10
V DD = 4V
V DD = 3V
Figure 2-6:
I OL (mA)
V OL vs. I OL
0
-40
-20
0
20
40
60
80
100
1.3
TEMPERATURE ( ° C)
1.2
Figure 2-4:
I DD vs. Temperature
1.1
1.00
0.9
0.8
0.7
-40
-20
0
20
40
60
80
100
TEMPERATURE ( ° C)
* Multiply value at 25 ° C by this
factor to determine the value at
temperature
? 2001 Microchip Technology Inc.
Figure 2-7:
Normalized I OL vs. Temperature
DS11184D-page 5
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