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| 型号： | MCP1401T-E/MC |
| 厂商： | Microchip Technology |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR .5A 8-DFN |
| 标准包装： | 3,300 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 500mA |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VFDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（2x3） |
| 包装： | 带卷 (TR) |
| 其它名称： | MCP1401T-E/MCTR |
MCP1401/02
4.0
APPLICATION INFORMATION
4.1 General Information
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1401/02 family can be
used to provide additional source/sink current
capability.
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the
+5V
Input
Input
V DD = 18V
1 μF
MCP1402
0.1 μF
Ceramic
Output
C L = 470 pF
90%
drivers rise time (t R ), fall time (t F ), and propagation
delays (t D1 and t D2 ). The MCP1401/02 family of drivers
0V
10%
can typically charge and discharge a 470 pF load
capacitance in 19 ns along with a typical matched
propagation delay of 35 ns. Figure 4-1 and Figure 4-2
18V
Output
t D1 90%
t R
t D2
90%
t F
show the test circuit and timing waveform used to verify
the MCP1401/02 timing.
0V
10%
10%
FIGURE 4-2:
Non-Inverting Driver Timing
V DD = 18V
Waveform.
1 μF
0.1 μF
Ceramic
4.3
Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
Input
+5V
Input
MCP1401
Output
C L = 470 pF
90%
capacitive loads quickly. For example, approximately
550 mA are needed to charge a 470 pF load with 18V
in 15 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor is recommended to be placed in
parallel between the driver V DD and GND. A 1.0 μF low
ESR film capacitor and a 0.1 μF ceramic capacitor
placed between pins 2 and 1 should be used. These
capacitors should be placed close to the driver to
0V 10%
18V
Output
t D1
90%
t F
t D2
t R
90%
minimized circuit board parasitics and provide a local
source for the required current.
4.4 PCB Layout Considerations
0V
10%
10%
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
FIGURE 4-1:
Waveform.
DS22052B-page 10
Inverting Driver Timing
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
Placing a ground plane beneath the MCP1401/02 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
? 2007 Microchip Technology Inc.
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相关代理商/技术参数 |
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|---|---|
| MCP1402 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 500 mA, High-Speed Power MOSFET Driver |
| MCP1402T-E/MC | 功能描述:功率驱动器IC 05A Sngl MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP1402T-E/OT | 功能描述:功率驱动器IC 0.5A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP1403 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4.5A Dual High-Speed Power MOSFET Drivers |
| MCP1403-E/MF | 功能描述:功率驱动器IC 4.5A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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