参数资料
型号: MCP1404-E/SO
厂商: Microchip Technology
文件页数: 10/22页
文件大小: 0K
描述: IC MOSFET DVR 4.5A DUAL 16SOIC
标准包装: 47
配置: 低端
输入类型: 非反相
延迟时间: 40ns
电流 - 峰: 4.5A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC
包装: 管件
MCP1403/4/5
4.0
4.1
APPLICATION INFORMATION
General Information
MOSFET drivers are high-speed, high current devices
V DD = 18V
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching
power supplies, the PWM controller may not have the
drive capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1403/4/5 family can be
used to provide additional source/sink current
capability.
Input
Input
1 μF
0.1 μF
Ceramic
Output
C L = 2200 pF
4.2
MOSFET Driver Timing
MCP1404
(1/2 MCP1405)
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the driv-
ers rise time (t R ), fall time (t F ), and propagation delays
(t D1 and t D2 ). The MCP1403/4/5 family of drivers can
typically charge and discharge a 2200 pF load capaci-
+5V
Input
90%
tance in 15 ns along with a typical matched propaga-
tion delay of 40 ns. Figure 4-1 and Figure 4-2 show the
test circuit and timing waveform used to verify the
MCP1403/4/5 timing.
0V
18V
Output
10%
t D1 90%
t R
t D2
90%
t F
V DD = 18V
0V
10%
10%
1 μF
0.1 μF
Ceramic
FIGURE 4-2:
Waveform.
Non-Inverting Driver Timing
Input
Input
+5V
MCP1403
(1/2 MCP1405)
Output
C L = 2200 pF
90%
4.3 Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.5A are needed
to charge a 2200 pF load with 18V in 16 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance a ceramic and low
ESR film capacitor are recommended to be placed in
Input
0V
18V
Output
10%
t D1
90%
t F
t D2
t R
90%
parallel between the driver V DD and GND. A 1.0 μF low
ESR film capacitor and a 0.1 μF ceramic capacitor
placed between V DD and GND pins should be used.
These capacitors should be placed close to the driver
to minimized circuit board parasitics and provide a local
source for the required current.
0V
10%
10%
4.4
PCB Layout Considerations
FIGURE 4-1:
Waveform.
DS22022B-page 10
Inverting Driver Timing
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
? 2007 Microchip Technology Inc.
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