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| 型号： | MCP1415T-E/OT |
| 厂商： | Microchip Technology |
| 文件页数： | 11/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 1.5A HS TSOT23-5 |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 反相 |
| 输出数： | 1 |
| 导通状态电阻： | 6 欧姆 |
| 电流 - 峰值输出： | 1.5A |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 标准包装 |
| 产品目录页面： | 670 (CN2011-ZH PDF) |
| 其它名称： | MCP1415T-E/OTDKR |
MCP1415/16
4.4
Power Dissipation
4.4.3
OPERATING POWER DISSIPATION
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
EQUATION 4-1:
P T = PL + PQ + P CC
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
EQUATION 4-4:
Where:
P T
=
Total power dissipation
Where:
P
CC
= CC ? f ? V
DD
P L
P Q
P CC
=
=
=
Load power dissipation
Quiescent power dissipation
Operating power dissipation
CC
f
=
=
Cross-conduction constant
(A*sec)
Switching frequency
4.4.1
CAPACITIVE LOAD DISSIPATION
V DD
=
MOSFET driver supply voltage
The power dissipation caused by a capacitive load is a
4.5
PCB Layout Considerations
direct function of the frequency, total capacitive load,
and supply voltage. The power lost in the MOSFET
driver for a complete charging and discharging cycle of
EQUATION 4-2:
Proper PCB layout is important in high current, fast
switching circuits to provide proper device operation
and robustness of design. Improper component
placement may cause errant switching, excessive
voltage ringing, or circuit latch-up. PCB trace loop area
= f ? C ? V
Where:
P
L
T
DD
2
and inductance must be minimized. This is
accomplished by placing the MOSFET driver directly at
the load and placing the bypass capacitor directly at the
f
C T
V DD
=
=
=
Switching frequency
Total load capacitance
MOSFET driver supply voltage
MOSFET driver ( Figure 4-3 ). Locating ground planes
or ground return traces directly beneath the driver
output signal also reduces trace inductance. A ground
plane will also help as a radiated noise shield as well as
providing some heat sinking for power dissipated within
4.4.2
QUIESCENT POWER DISSIPATION
the device ( Figure 4-4 ).
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1415/16 devices have a quiescent current
draw when the input is high of 0.65 mA (typical) and
0.1 mA (typical) when the input is low. The quiescent
EQUATION 4-3:
PQ = ? IQH ? D + IQL ? ? 1 – D ? ? ? VDD
Where:
FIGURE 4-3:
Recommended PCB Layout
I QH
=
Quiescent current in the high
(TOP).
state
D
I QL
V DD
=
=
=
Duty cycle
Quiescent current in the low
state
MOSFET driver supply voltage
FIGURE 4-4:
(BOTTOM).
Recommended PCB Layout
? 2008-2012 Microchip Technology Inc.
DS22092E-page 11
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相关代理商/技术参数 |
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|---|---|
| MCP1415T-OT | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 1.5A, High-Speed Power MOSFET Driver |
| MCP1416 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 1.5A, High-Speed Power MOSFET Driver |
| MCP1416RT | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 1.5A, High-Speed Power MOSFET Driver |
| MCP1416RT-E | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 1.5A, High-Speed Power MOSFET Driver |
| MCP1416RT-E/OT | 功能描述:功率驱动器IC 1.5A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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