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| 型号： | MCP14E5T-E/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 17/26页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 4.0A DUAL 8SOIC |
| 标准包装： | 3,300 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 46ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | MCP14E5T-E/SNTR |
MCP14E3/MCP14E4/MCP14E5
8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
N
NOTE 1
E1
1
2
3
A
D
A2
E
A1
b1
b
e
L
Units
e B
INCHES
c
Number of Pins
Pitch
Dimension Limits
N
e
MIN
NOM
8
.100 BSC
MAX
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing §
A
A2
A1
E
E1
D
L
c
b1
b
eB
–
.115
.015
.290
.240
.348
.115
.008
.040
.014
–
–
.130
–
.310
.250
.365
.130
.010
.060
.018
–
.210
.195
–
.325
.280
.400
.150
.015
.070
.022
.430
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-018B
? 2008 Microchip Technology Inc.
DS22062B-page 17
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| MCP14E6 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.0A Dual High-Speed Power MOSFET Driver With Enable |
| MCP14E6-E/MF | 功能描述:功率驱动器IC 3A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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| MCP14E6-E/P | 功能描述:功率驱动器IC 3A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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