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| 型号： | MCP14E6-E/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 3/30页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 2A 8SOIC |
| 标准包装： | 100 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 45ns |
| 电流 - 峰： | 2A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
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MCP14E6/7/8
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
Absolute Maximum Ratings ?
Supply Voltage ................................................................+20V
Input Voltage ............................... (V DD + 0.3V) to (GND – 5V)
Enable Voltage .............................(V DD + 0.3V) to (GND - 5V)
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating
conditions for extended periods may affect device
reliability.
Input Current (V IN >V DD )................................................50 mA
Package Power Dissipation (T A = +50 o C)
8L-DFN ........................................................................ Note 3
8L-PDIP ........................................................................1.12W
8L-SOIC .....................................................................669 mW
DC CHARACTERISTICS (2)
Electrical Specifications: Unless otherwise indicated, T A = +25°C, with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
—
1.5
1.3
—
0.8
V
V
Input Current
Input Voltage
I IN
V IN
-1
-5
—
—
1
V DD + 0.3
μA
V
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
V OH
V OL
R OH
R OL
I PK
V DD – 0.025
—
—
—
—
—
—
5
5
2
—
0.025
8
8
—
V
V
Ω
Ω
A
DC Test
DC Test
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
V DD = 18V (2)
Switching Time (1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
t R
t F
t D1
t D2
—
—
—
—
12
15
45
45
30
35
55
55
ns
ns
ns
ns
Figure 4-1 , Figure 4-2 ,
C L = 1000 pF
Figure 4-1 , Figure 4-2 ,
C L = 1000 pF
Figure 4-1 , Figure 4-2
Figure 4-1 , Figure 4-2
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Pull-up Impedance
Enable Pin Leakage Current
Propagation Delay Time
Propagation Delay Time
V EN_H
V EN_L
V HYST
R ENBL
I ENBL
t D3
t D4
2.4
—
—
0.7
—
—
—
1.6
1.2
400
1.6
10
35
35
—
0.8
—
3.0
—
65
65
V
V
mV
M Ω
μA
ns
ns
V DD = 12V, Low-to-High Transition
V DD = 12V, High-to-Low Transition
V DD = 14V, ENBL = GND
V DD = 12V,
ENB_A = ENB_B = GND
V DD = 12V, Figure 4-3
V DD = 12V, Figure 4-3
Note 1:
2:
3:
Switching times are ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area of the PCB.
? 2011 Microchip Technology Inc.
DS25006A-page 3
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