参数资料
型号: MCP1630-E/MS
厂商: Microchip Technology
文件页数: 6/26页
文件大小: 0K
描述: IC REG CTRLR BST FLYBK ISO 8MSOP
标准包装: 100
PWM 型: 电压模式
输出数: 1
频率 - 最大: 1MHz
占空比: 75%
电源电压: 3 V ~ 5.5 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
包装: 管件
产品目录页面: 668 (CN2011-ZH PDF)
配用: MCP1630DM-LED2-ND - BOARD DEM MCP1630 BOOST MODE LED
MCP1630RD-NMC1-ND - REF DESIGN MCP1630 NIMH BATT CHG
MCP1630RD-DDBK3-ND - REF DESIGN MCP1630V BI-DIR 4CELL
MCP1630DM-DDBK4-ND - BOARD CONV DEMO MCP1630 TRPL-OUT
MCP1630DM-DDBS2-ND - BOARD DEMO BOOST COUPLED INDUCTR
MCP1630DM-DDBS1-ND - BOARD DEMO BOOST AUTO INPUT
MCP1630DM-NMC1-ND - BOARD DEMO FOR MCP1630
MCP1630/MCP1630V
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
V DD ...................................................................................6.0V
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Maximum Voltage on Any Pin .. (V GND - 0.3)V to (V IN + 0.3)V
V EXT Short Circuit Current ...........................Internally Limited
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature, T J ........................... +150°C
Continuous Operating Temperature Range ..-40°C to +125°C
ESD protection on all pins, HBM ......................................... 3 kV
AC/
AC/DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V IN = 3.0V to 5.5V, F OSC = 1 MHz with 10% Duty Cycle, C IN = 0.1 μF,
V IN for typical values = 5.0V, T A = -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Voltage
Input Operating Voltage
V IN
3.0
5.5
V
Input Quiescent Current
I(V IN )
2.8
4.5
mA
I EXT = 0 mA, F OSC IN = 0 Hz
Oscillator Input
External Oscillator Range
Min. Oscillator High Time
F OSC
T OH_MIN
10
1
MHz
ns
Min. Oscillator Low Time
T OL_MIN
Oscillator Rise Time
Oscillator Fall Time
Oscillator Input Voltage Low
Oscillator Input Voltage High
T RISE
T FALL
V L
V H
0.01
0.01
2.0
10
10
0.8
μs
μs
V
V
Oscillator Input Capacitance
C OSC
5
pf
External Reference Input
Reference Voltage Input
V REF
0
V IN
V
Error Amplifier
Input Offset Voltage
V OS
-4
0.1
+4
mV
Error Amplifier PSRR
Common Mode Input Range
Common Mode Rejection Ratio
Open-loop Voltage Gain
PSRR
V CM
A VOL
80
GND - 0.3
85
99
80
95
V IN
dB
V
dB
dB
V IN = 3.0V to 5.0V, V CM = 1.2V
V IN = 5V, V CM = 0V to 2.5V
R L = 5 k Ω to V IN /2, 100 mV < V EAOUT
< V IN - 100 mV, V CM = 1.2V
Low-level Output
Gain Bandwidth Product
Error Amplifier Sink Current
V OL
GBWP
I SINK
5
25
3.5
11
GND + 50
mV
MHz
mA
RL = 5 k Ω to V IN /2
V IN = 5V
V IN = 5V, V REF = 1.2V, V FB = 1.4V,
V COMP = 2.0V
Error Amplifier Source Current
I SOURCE
-2
-9
mA
V IN = 5V, V REF = 1.2V, V FB = 1.0V,
V COMP = 2.0V, Absolute Value
Note 1:
2:
3:
Capable of higher frequency operation depending on minimum and maximum duty cycles needed.
External oscillator input (OSC IN) rise and fall times between 10 ns and 10 μs used for characterization testing. Signal
levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum
values. Not production tested.
The reference input of the internal amplifier is capable of rail-to-rail operation.
DS21896B-page 6
? 2005 Microchip Technology Inc.
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