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| 型号： | MCP1631VT-E/SS |
| 厂商： | Microchip Technology |
| 文件页数： | 6/34页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR ISO PWM VM 20-SSOP |
| 标准包装： | 1,600 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 2MHz |
| 占空比： | 10% |
| 电源电压： | 3 V ~ 5.5 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 是 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 20-SSOP（0.209"，5.30mm 宽） |
| 包装： | 带卷 (TR) |
| 其它名称： | MCP1631VT-E/SSTR |
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MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V IN = 3.0V to 5.5V, F OSC = 1 MHz with 10% Duty Cycle, C IN = 0.1 μF,
V DD for typical values = 5.0V, T A for typical values = +25°C, T A = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max
Units
Conditions
External Reference Input
Reference Voltage Input
V REF
0
—
AV DD
V
The reference input is capable of
rail-to-rail operation.
Internal Driver)
R DSON P-channel
R DSON N-channel
R DSon_P
R DSon_N
—
—
7.2
3.8
15
15
Ω
Ω
V EXT Rise Time
V EXT Fall Time
T RISE
T FALL
—
—
2.5
2.7
18
18
ns
ns
C L = 100 pF
C L = 100 pF
Error Amplifier (A1)
Input Offset Voltage
A1 Input Bias Current
V OS
I BIAS
-5
—
-0.6
0.05
+5
1
mV
μA
Error Amplifier PSRR
Common Mode Input Range
Common Mode Rejection Ratio
Open-loop Voltage Gain
Low-level Output
Gain Bandwidth Product
Error Amplifier Sink Current
Error Amplifier Source Current
PSRR
V CM
A VOL
V OL
GBWP
I SINK
I SOURCE
—
GND - 0.3
—
80
—
—
4
-2
85.4
—
90
95
25
3.5
12
-9.8
—
V IN
—
—
GND + 65
—
—
—
dB
V
dB
dB
mV
MHz
mA
mA
V IN = 3.0V to 5.0V, V CM = 1.2V
V IN = 5V, V CM = 0V to 2.5V
R L = 5 k ? to V IN /2,
100 mV < V EAOUT < V IN - 100 mV,
V CM = 1.2V
RL = 5 k ? to V IN /2
V IN = 5V
V IN = 5V, V REF = 1.2V,
V FB = 1.4V, V COMP = 2.0V
V IN = 5V, V REF = 1.2V,
V FB = 1.0V, V COMP = 2.0V,
Absolute Value
Current Sense (CS) Amplifier (A2)
Input Offset Voltage
CS Input Bias Current
V OS
I BIAS
-3.0
—
1.2
0.13
+3.0
1
mV
μA
CS Amplifier PSRR
Closed-loop Voltage Gain
Low-level Output
CS Sink Current
CS Amplifier Source Current
PSRR
A2 VCL
V OL
I SINK
I SOURCE
—
—
5
5
-5
65
10
11
17.7
-19.5
—
—
GND + 50
—
—
dB
V/V
mV
mA
mA
V IN = 3.0V to 5.0V, V CM = 0.12V,
GAIN = 10
R L = 5 k ? to V IN /2,
100 mV < V OUT < V IN - 100 mV,
V CM = +0.12V
RL = 5 k ? to V IN /2
Voltage Sense (VS) Amplifier (A3)
Input Offset Voltage
VS Input Bias Current
V OS
I BIAS
-5
—
0.9
0.001
+5
1
mV
μA
Note 1:
2:
3:
4:
5:
External Oscillator Input (OSC IN ) rise and fall times between 10 ns and 10 μs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum V IN must meet two conditions: V IN ≥ 3.5V and V IN ≥ (V OUT(MAX) + V DROPOUT(MAX) ).
TCV OUT = (V OUT-HIGH - V OUT-LOW ) *10 6 / (V R * Δ Temperature), V OUT-HIGH = highest voltage measured over the
temperature range. V OUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV OUT .
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V OUT(MAX) + V DROPOUT(MAX) or 3.5V, whichever is greater.
DS22063B-page 6
? 2008 Microchip Technology Inc.
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