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| 型号： | MCP1700-5002E/TO |
| 厂商： | Microchip Technology |
| 文件页数： | 14/24页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 5V .25A TO-92-3 |
| 标准包装： | 1,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 5V |
| 输入电压： | 最高 6V |
| 电压 - 压降（标准）： | 0.178V @ 250mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 250mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
MCP1700
6.3
Voltage Regulator
T J = T JRISE + T A(MAX)
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1 POWER DISSIPATION EXAMPLE
Package
Package Type = SOT-23
Input Voltage
V IN = 2.3V to 3.2V
LDO Output Voltages and Currents
V OUT = 1.8V
I OUT = 150 mA
T J = 90.2°C
Maximum Package Power Dissipation at +40°C
Ambient Temperature
SOT-23 (230.0°C/Watt = R θ JA )
P D(MAX) = (125°C - 40°C) / 230°C/W
P D(MAX) = 369.6 milli-Watts
SOT-89 (52°C/Watt = R θ JA )
P D(MAX) = (125°C - 40°C) / 52°C/W
P D(MAX) = 1.635 Watts
TO-92 (131.9°C/Watt = R θ JA )
P D(MAX) = (125°C - 40°C) / 131.9°C/W
P D(MAX) = 644 milli-Watts
Maximum Ambient Temperature
6.4
Voltage Reference
T A(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V IN to V OUT ).
P LDO(MAX) = (V IN(MAX) - V OUT(MIN) ) x I OUT(MAX)
P LDO = (3.2V - (0.97 x 1.8V)) x 150 mA
P LDO = 218.1 milli-Watts
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
The MCP1700 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1700 LDO. The low cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1700 as a voltage
reference.
Ratio Metric Reference
V IN
V OUT
GND
from junction to ambient for the application. The thermal
resistance from junction to ambient (R θ JA ) is derived
from an EIA/JEDEC standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
1 μA Bias
MCP1700
C IN
1 μF
C OUT
1 μF
PIC ?
Microcontroller
V REF
ADO
AD1
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
Bridge Sensor
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application”, (DS00792), for more information regarding
FIGURE 6-2:
voltage reference.
Using the MCP1700 as a
this subject.
T J(RISE) = P TOTAL x Rq JA
6.5
Pulsed Load Applications
T JRISE = 218.1 milli-Watts x 230.0 ° C/Watt
T JRISE = 50.2 ° C
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
DS21826B-page 14
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1700. The internal
current limit of the MCP1700 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1700 . The typical current limit for the
MCP1700 is 550 mA (T A +25°C).
? 2007 Microchip Technology Inc.
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