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| 型号： | MCP1700T-1802E/TT |
| 厂商： | Microchip Technology |
| 文件页数： | 11/24页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 1.8V .2A SOT23-3 |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 1.8V |
| 输入电压： | 2.3 V ~ 6 V |
| 电压 - 压降（标准）： | 0.15V @ 200mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 200mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 664 (CN2011-ZH PDF) |
| 其它名称： | MCP1700T1802ETTDKR |
MCP1700
4.0
DETAILED DESCRIPTION
4.1
Output Regulation
4.3
Overtemperature
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal bandgap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1 ).
4.2 Overcurrent
The MCP1700 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1700 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
MCP1700
V IN
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 140°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
V OUT
Error Amplifier
+V IN
Overcurrent
Overtemperature
Voltage
Reference
GND
-
+
FIGURE 4-1:
Block Diagram.
? 2007 Microchip Technology Inc.
DS21826B-page 11
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| MCP1700T-2002E/TT | 功能描述:低压差稳压器 - LDO 250mA CMOS LDO Isupp 1uA 2% Vout Acc RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1700T-2102E/TT | 功能描述:低压差稳压器 - LDO 250mA CMOS LDO Isupp 1uA 2% Vout Acc RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1700T-2201E/TT | 制造商:Microchip Technology Inc 功能描述:CMOS LDO, ISUPPLY 1UA AND 2% V - Tape and Reel |
| MCP1700T-2202E/MB | 功能描述:低压差稳压器 - LDO 250mA CMOS LDO Isupp 1uA 2% Vout Acc RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1700T-2202E/TT | 功能描述:低压差稳压器 - LDO 250mA CMOS LDO Isupp 1uA 2% Vout Acc RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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