参数资料
| 型号： | MCP1701AT-4602I/MB |
| 厂商： | Microchip Technology |
| 文件页数： | 11/22页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 4.6V SOT89-3 |
| 标准包装： | 1,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 4.6V |
| 输入电压： | 最高 10V |
| 稳压器数量： | 1 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | SOT-89-3 |
| 包装： | 带卷 (TR) |
MCP1701A
5.0
THERMAL CONSIDERATIONS
To determine the junction temperature of the device, the
thermal resistance from junction-to-ambient must be
5.1 Power Dissipation
The amount of power dissipated internal to the LDO
linear regulator is the sum of the power dissipation
within the linear pass device (P-channel MOSFET) and
the quiescent current required to bias the internal
reference and error amplifier. The internal linear pass
device power dissipation is calculated as shown in
EQUATION 5-1:
P D (Pass Device) = (V IN – V OUT ) x I OUT
The internal power dissipation, as a result of the bias
current for the LDO internal reference and error
EQUATION 5-2:
P D (Bias) = V IN x I GND
The total internal power dissipation is the sum of P D
(pass device) and P D (bias).
EQUATION 5-3:
P TOTAL = P D (Pass Device) + P D (Bias)
For the MCP1701A, the internal quiescent bias current
is so low (2 μA, typ.) that the P D (bias) term of the
power dissipation equation can be ignored. The
maximum power dissipation can be estimated by using
the maximum input voltage and the minimum output
voltage to obtain a maximum voltage differential
between input and output. The next step would be to
multiply the maximum voltage differential by the
maximum output current.
EQUATION 5-4:
P D = (V INMAX – V OUTMIN ) x I OUTMAX
Given:
known. The 3-pin SOT-23A thermal resistance from
junction-to-air (R θ JA ) is estimated to be approximately
335°C/W. The SOT-89 R θ JA is estimated to be
approximately 52°C/W when mounted on 1 square inch
of copper. The R θ JA will vary with physical layout, airflow
and other application-specific conditions.
The device junction temperature is determined by
calculating the junction temperature rise above
ambient, then adding the rise to the ambient
temperature.
EQUATION 5-5: JUNCTION TEMPERATURE
– SOT-23A EXAMPLE:
T J = P DMAX × R θ JA + T A
T J = 116.0 milliwatts × 335°C/W + 55°C
T J = 93.9°C
EQUATION 5-6: JUNCTION TEMPERATURE
– SOT-89 EXAMPLE:
T J = 116.0 milliwatts × 52°C/W + 55°C
T J = 61°C
V IN
V OUT
I OUT
T AMAX
P MAX
=
=
=
=
=
3.3V to 4.1V
3.0V ± 2%
1 mA to 100 mA
55°C
(4.1V – (3.0V x 0.98)) x 100 mA
? 2007 Microchip Technology Inc.
DS21991C-page 11
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