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| 型号： | MCP1702T-4002E/MB |
| 厂商： | Microchip Technology |
| 文件页数： | 15/26页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 4V .25A SOT89-3 |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 4V |
| 输入电压： | 最高 13.2V |
| 电压 - 压降（标准）： | 0.525V @ 250mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 250mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | SOT-89-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 667 (CN2011-ZH PDF) |
| 其它名称： | MCP1702T-4002E/MBDKR |
MCP1702
6.3
Voltage Regulator
Junction Temperature Estimate
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
6.3.1
POWER DISSIPATION EXAMPLE
T J
T J
= T JRISE + T A(MAX)
= 113.3°C
Package
Maximum Package Power Dissipation at +40°C
Package Type
Input Voltage
=
SOT-23A
Ambient Temperature Assuming Minimal Copper
Usage.
V IN = 2.8V to 3.2V
LDO Output Voltages and Currents
SOT-23 (336.0°C/Watt = R ? JA )
P D(MAX) = (+125°C - 40°C) / 336°C/W
V OUT
=
1.8V
P D(MAX)
=
253 milli-Watts
I OUT = 150 mA
Maximum Ambient Temperature
T A(MAX) = +40°C
Internal Power Dissipation
SOT-89 (153.3°C/Watt = R ? JA )
P D(MAX) = (+125°C - 40°C) / 153.3°C/W
P D(MAX) = 0.554 Watts
TO92 (131.9°C/Watt = R ? JA )
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V IN to V OUT ).
P D(MAX)
P D(MAX)
=
=
(+125°C - 40°C) / 131.9°C/W
644 milli-Watts
P LDO(MAX)
P LDO
P LDO
=
=
=
(V IN(MAX) - V OUT(MIN) ) x
I OUT(MAX)
(3.2V - (0.97 x 1.8V)) x 150 mA
218.1 milli-Watts
6.4 Voltage Reference
The MCP1702 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R ? JA ) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1702 LDO. The low-cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1702 as a voltage
reference.
Ratio Metric Reference
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
2 μA Bias
MCP1702
PIC ?
Microcontroller
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
C IN
1 μF
V IN
V OUT
GND
C OUT
1 μF
V REF
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application” , (DS00792), for more information
regarding this subject.
Bridge Sensor
ADO
AD1
T J(RISE)
=
P TOTAL x Rq JA
T JRISE
T JRISE
=
=
218.1 milli-Watts x 336.0 ° C/Watt
73.3 ° C
FIGURE 6-2:
Voltage Reference.
Using the MCP1702 as a
? 2010 Microchip Technology Inc.
DS22008E-page 15
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