- 您现在的位置：买卖IC网 > PDF目录4996 > MCP1703T-2502E/MC (Microchip Technology)IC REG LDO 2.5V .25A 8-DFN PDF资料下载
参数资料
| 型号： | MCP1703T-2502E/MC |
| 厂商： | Microchip Technology |
| 文件页数： | 15/32页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 2.5V .25A 8-DFN |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 2.5V |
| 输入电压： | 最高 16V |
| 电压 - 压降（标准）： | 0.75V @ 250mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 250mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VFDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（2x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 667 (CN2011-ZH PDF) |
| 其它名称： | MCP1703T-2502E/MCDKR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页当前第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页
MCP1703
6.3
Voltage Regulator
Junction Temperature Estimate
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
6.3.1
POWER DISSIPATION EXAMPLE
T J = T JRISE + T A(MAX)
T J = 91.3°C
Package
Package Type: SOT-23A
Input Voltage:
V IN = 2.7V to 4.8V
LDO Output Voltages and Currents
V OUT = 1.8V
I OUT = 50 mA
Maximum Ambient Temperature
T A(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V IN to V OUT ).
Maximum Package Power Dissipation at +40°C
Ambient Temperature Assuming Minimal Copper
Usage.
SOT-23A (336.0°C/Watt = R θ JA )
P D(MAX) = (+125°C - 40°C) / 336°C/W
P D(MAX) = 253 milli-Watts
SOT-89 (153.3°C/Watt = R θ JA )
P D(MAX) = (+125°C - 40°C) / 153.3°C/W
P D(MAX) = 0.554 Watts
SOT-223 (62.9°C/Watt = R θ JA )
P D(MAX) = (+125°C - 40°C) / 62.9°C/W
P D(MAX) = 1.35 Watts
P LDO(MAX) = (V IN(MAX) - V OUT(MIN) ) x I OUT(MAX)
6.4
Voltage Reference
P LDO = (4.8V - (0.97 x 1.8V)) x 50 mA
P LDO = 152.7 milli-Watts
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R θ JA ) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
The MCP1703 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1703 LDO. The low-cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1703 as a voltage
reference.
Ratio Metric Reference
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
2 μA Bias
C IN
1 μF
MCP1703
V IN
V OUT
GND
C OUT
1 μF
PIC ?
Microcontroller
V REF
How Much Power a SOT23 Can Dissipate in an
Application” , (DS00792), for more information
regarding this subject.
T J(RISE) = P TOTAL x Rq JA
T JRISE = 152.7 milli-Watts x 336.0 ° C/Watt
Bridge Sensor
ADO
AD1
T JRISE = 51.3 ° C
? 2011 Microchip Technology Inc.
FIGURE 6-2:
Voltage Reference.
Using the MCP1703 as a
DS22049F-page 15
相关PDF资料 |
PDF描述 |
|---|---|
| MCP1703T-1802E/MC | IC REG LDO 1.8V 50mA 8-DFN |
| GSM28DSEF-S13 | CONN EDGECARD 56POS .156 EXTEND |
| MCP1825ST-3302E/DB | IC REG LDO 3.3V .5A SOT223-3 |
| RCA49DRSD-S288 | CONN EDGECARD 98POS .125 EXTEND |
| MCP1703T-1202E/MC | IC REG LDO 1.2V 50mA 8-DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCP1703T-2802E/CB | 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V max Vout =2.8V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1703T-2802E/DB | 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V max Vout =2.8V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1703T-2802E/MB | 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V max Vout =2.8V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1703T-3002E/CB | 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V maxVout 3.0V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1703T-3002E/DB | 功能描述:低压差稳压器 - LDO Low Iq 250mA LDO Vin 16V maxVout 3.0V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
发布紧急采购，3分钟左右您将得到回复。