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| 型号： | MCP1754ST-1802E/DB |
| 厂商： | Microchip Technology |
| 文件页数： | 22/42页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 1.8V .15A SOT-223 |
| 标准包装： | 4,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 1.8V |
| 输入电压： | 3.6 V ~ 16 V |
| 电压 - 压降（标准）： | 0.3V @ 150mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
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MCP1754/MCP1754S
5.3
Voltage Regulator
T J = T JRISE + T A(MAX)
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected .
5.3.1 POWER DISSIPATION EXAMPLE
Package
Package Type = SOT23
Input Voltage
V IN = 3.6V to 4.8V
T J = 91.3°C
Maximum Package Power Dissipation Examples at
+40°C Ambient Temperature
SOT23 (336.0°C/Watt = R θ JA )
P D(MAX) = (125°C - 40°C) / 336°C/W
P D(MAX) = 253 milliwatts
SOT89 (153.3°C/Watt = R θ JA )
P D(MAX) = (125°C - 40°C) / 153.3°C/W
P D(MAX) = 554 milliwatts
LDO Output Voltages and Currents
5.4
Voltage Reference
V OUT = 1.8V
I OUT = 50 mA
Maximum Ambient Temperature
T A(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V IN to V OUT ).
P LDO(MAX) = (V IN(MAX) - V OUT(MIN) ) x I OUT(MAX)
P LDO = (4.8V - (0.97 x 1.8V)) x 50 mA
P LDO = 152.7 milli-Watts
The MCP1754/MCP1754S can be used not only as a
regulator, but also as a low quiescent current voltage
reference. In many microcontroller applications, the
initial accuracy of the reference can be calibrated using
production test equipment or by using a ratio
measurement. When the initial accuracy is calibrated,
the thermal stability and line regulation tolerance are
the only errors introduced by the MCP1754/
MCP1754S LDO. The low cost, low quiescent current
and small ceramic output capacitor are all advantages
when using the MCP1754/MCP1754S as a voltage
reference.
Device Junction Temperature Rise
The internal junction temperature rise is a function of
56 μA Bias
Ratio Metric Reference
MCP1754S PICmicro ?
microcontroller
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
resistance from junction to ambient (R θ JA ) is derived
C IN
1 μF
V IN
V OUT
GND
C OUT
1 μF
V REF
from an EIA/JEDEC standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
Bridge Sensor
FIGURE 5-2: Using the MCP1754/MCP1754S
as a Voltage Reference.
ADO
AD1
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
5.5
Pulsed Load Applications
Application”, (DS00792), for more information regarding
this subject.
T J(RISE) = P TOTAL x Rq JA
T JRISE = 152.7 milliwatts x 336.0 ° C/Watt
T JRISE = 51.3 ° C
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
DS22276A-page 22
For some applications, there are pulsed load current
events that may exceed the specified 150 mA
maximum specification of the MCP1754/MCP1754S.
The internal current limit of the MCP1754/MCP1754S
will prevent high peak load demands from causing non-
recoverable damage. The 150 mA rating is a maximum
average continuous rating. As long as the average
current does not exceed 150 mA, pulsed higher load
currents can be applied to the MCP1754/MCP1754S .
The typical current limit for the MCP1754/MCP1754S is
250 mA (T A +25°C).
? 2011 Microchip Technology Inc.
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