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参数资料
| 型号： | MCP1754ST-3302E/DB |
| 厂商： | Microchip Technology |
| 文件页数： | 21/42页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V .15A SOT-223 |
| 标准包装： | 4,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.3V |
| 输入电压： | 3.6 V ~ 16 V |
| 电压 - 压降（标准）： | 0.3V @ 150mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
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MCP1754/MCP1754S
5.0
5.1
APPLICATION CIRCUITS &
ISSUES
Typical Application
EQUATION
T J ( MAX ) = P TOTAL × R θ JA + T AMAX
T J(MAX) = Maximum continuous junction
temperature
The MCP1754/MCP1754S is most commonly used as
a voltage regulator. It’s low quiescent current and low
dropout voltage make it ideal for many battery-powered
applications.
P TOTAL = Total device power dissipation
R θ JA = Thermal resistance from junction to ambient
T AMAX = Maximum ambient temperature
V OUT
1.8V
I OUT
50 mA
MCP1754S
GND
V IN
V OUT
C OUT
1 μF Ceramic
V IN
3.6V to 4.8V
C IN
1 μF Ceramic
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION
R θ JA
FIGURE 5-1: Typical Application Circuit.
5.1.1 APPLICATION INPUT CONDITIONS
Package Type = SOT23
Input Voltage Range = 3.6V to 4.8V
V IN maximum = 4.8V
V OUT typical = 1.8V
I OUT = 50 mA maximum
( T J ( MAX ) – T A ( MAX ) )
P D ( MAX ) = ---------------------------------------------------
P D(MAX) = Maximum device power dissipation
T J(MAX) = Maximum continuous junction
temperature
T A(MAX) = Maximum ambient temperature
R θ JA = Thermal resistance from junction to ambient
5.2
5.2.1
Power Calculations
POWER DISSIPATION
EQUATION
T J ( RISE ) = P D ( MAX ) × R θ JA
The internal power dissipation of the MCP1754/
MCP1754S is a function of input voltage, output
voltage and output current. The power dissipation, as
a result of the quiescent current draw, is so low, it is
insignificant (56.0 μA x V IN ). The following equation
can be used to calculate the internal power dissipation
T J(RISE) = Rise in device junction temperature over
the ambient temperature
P D(MAX) = Maximum device power dissipation
R θ JA = Thermal resistance from junction to ambient
of the LDO.
EQUATION
EQUATION
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
P LDO = LDO Pass device internal power dissipation
V IN(MAX) = Maximum input voltage
V OUT(MIN) = LDO minimum output voltage
The maximum continuous operating junction
temperature specified for the MCP1754/MCP1754S is
+150 ° C . To estimate the internal junction temperature
of the MCP1754/MCP1754S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (R θ JA ). The thermal resistance from
junction to ambient for the SOT23A pin package is
estimated at 336 ° C/W.
? 2011 Microchip Technology Inc.
T J = T J ( RISE ) + T A
T J = Junction Temperature
T J(RISE) = Rise in device junction temperature over
the ambient temperature
T A = Ambient temperature
DS22276A-page 21
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