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| 型号： | MCP1804T-3002I/DB |
| 厂商： | Microchip Technology |
| 文件页数： | 20/32页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3V .15A SOT223-3 |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3V |
| 输入电压： | 最高 28V |
| 电压 - 压降（标准）： | 1.3V @ 100mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA（最小） |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 668 (CN2011-ZH PDF) |
| 其它名称： | MCP1804T-3002I/DBDKR |
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MCP1804
6.0
6.1
APPLICATION CIRCUITS AND
ISSUES
Typical Application
EQUATION 6-2:
T J ( MAX ) = P TOTAL × R θ JA + T AMAX
Where:
The MCP1804 is most commonly used as a voltage
regulator. It’s low quiescent current and wide input volt-
age make it ideal for Li-Ion and 12V battery-powered
applications.
T J(MAX)
P TOTAL
R ? JA
T AMAX
=
=
=
=
Maximum continuous junction
temperature.
Total device power dissipation.
Thermal resistance from junction to
ambient.
Maximum ambient temperature.
SHDN
NC
The maximum power dissipation capability for a
package can be calculated given the junction-
V OUT
1.8V
I OUT
50 mA
V OUT
C OUT
1 μF Ceramic
GND
V IN
V IN
4.2V
C IN
1 μF
Ceramic
to-ambient thermal resistance and the maximum
ambient temperature for the application. The following
equation can be used to determine the package
maximum internal power dissipation.
EQUATION 6-3:
R θ JA
FIGURE 6-1: Typical Application Circuit.
6.1.1 APPLICATION INPUT CONDITIONS
Where:
( T J ( MAX ) – T A ( MAX ) )
P D ( MAX ) = ---------------------------------------------------
Package Type
Input Voltage Range
V IN maximum
V OUT typical
I OUT
= SOT-23
= 3.8V to 4.2V
= 4.6V
= 1.8V
= 50 mA maximum
P D(MAX)
T J(MAX)
T A(MAX)
R ? JA
=
=
=
=
Maximum device power dissipation.
Maximum continuous junction
temperature.
Maximum ambient temperature.
Thermal resistance from junction to
ambient.
6.2
6.2.1
Power Calculations
POWER DISSIPATION
EQUATION 6-4:
T J ( RISE ) = P D ( MAX ) × R θ JA
The internal power dissipation of the MCP1804 is a
Where:
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(50.0 μA x V IN ). The following equation can be used to
calculate the internal power dissipation of the LDO.
T J(RISE)
P D(MAX)
R ? JA
=
=
=
Rise in device junction temperature over
the ambient temperature.
Maximum device power dissipation.
Thermal resistance from junction to
ambient.
EQUATION 6-1:
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
Where:
EQUATION 6-5:
T J = T J ( RISE ) + T A
Where:
P LDO = LDO Pass device internal power
dissipation
V IN(MAX) = Maximum input voltage
V OUT(MIN) = LDO minimum output voltage
T J
T J(RISE)
T A
=
=
=
Junction Temperature.
Rise in device junction temperature over
the ambient temperature.
Ambient temperature.
The maximum continuous operating temperature
specified for the MCP1804 is +85 ° C . To estimate the
internal junction temperature of the MCP1804, the total
internal power dissipation is multiplied by the thermal
resistance from junction to ambient (R θ JA ). The thermal
resistance from junction to ambient for the SOT-23 pin
package is estimated at 256 ° C/W.
DS22200C-page 20
? 2011 Microchip Technology Inc.
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